c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . wfu wfu wfu wfu 1 1 1 1 n60 n60 n60 n60 rev.a dec .2010 silicon silicon silicon silicon n-channel n-channel n-channel n-channel mosfet mosfet mosfet mosfet features ? 1.3a,600v,r ds(on) (max 8.5 ? )@v gs =10v ? ultra-low gate charge(typical 9.1nc) ? fast switching capability ? 100%avalanche tested ? maximum junction temperature range(150 ) general description this power mosfet is produced using winsemi's advanced planar stripe, v dmos technology. this latest technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics. this devices is specially well suited for high efficiency switch mode power supply , electronic lamp ballasts based on half bridge and ups. absolute maximum ratings symbol parameter value units v dss drain source voltage 600 v i d continuous drain current(@tc=25 ) 1.3 a continuous drain current(@tc=100 ) 0.84 a i dm drain current pulsed (note1) 5.0 a v gs gate to source voltage 30 v e as single pulsed avalanche energy (note2) 78 mj e ar repetitive avalanche energy (note1) 3.9 mj dv/dt peak diode recovery dv /dt (note3) 5.5 v/ ns p d total power dissipation(@tc=25 ) 32 w derating factor above 25 0.24 w/ t j ,t stg junction and storage temperature -55~150 t l maximum lead temperature for soldering purposes 300 thermal characteristics symbol parameter value units min typ max r qjc thermal resistance , junction -to -case - - 3.9 /w r qcs thermal resistance , c ase-to-sink 0.5 - - /w r qja thermal resistance , junction-to -ambient - - 110 /w www.datasheet.co.kr datasheet pdf - http://www..net/
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wfu wfu wfu wfu 1 1 1 1 n60 n60 n60 n60 2 / 7 electrical characteristics(tc=25 ) characteristics symbol test condition min type max unit gate leakage current i gss v gs = 30 v,v ds =0v - - 100 na gate-source breakdown voltage v (br)gss i g = 10 a,v ds =0v 30 - - v drain cut -off current i dss v ds = 600 v,v gs =0v - - 10 a v ds =480v,tc=125 - 100 a drain -source breakdown voltage v (br)dss i d =250 a,v gs =0v 600 - - v break voltage temperature coefficient bv dss / t j i d =250 a ,referenced to 25 - 0.5 - v/ gate threshold voltage v gs(th) v ds =10v,i d =250 a 2 - 4 v drain -source on resistance r ds(on) v gs =10v,i d = 0.65 a - 7.7 8.5 ? forward transconductance gfs v ds = 40 v,i d = 0.65 a - 1.3 - s input capacitance c iss v ds =25v, v gs =0v, f=1mhz - 247 318 pf reverse transfer capacitance c rss - 5 6.5 output capacitance c oss - 23 30 switching time rise time tr v dd = 300 v, i d = 1.3 a r g = 25 ? (note4,5) - 11 26 ns turn-on time ton - 33 72 fall time tf - 26 59 turn-off time toff - 26 59 total gate charge(gate-source plus gate-drain) qg v dd = 480 v , v gs =10v, i d = 1.3 a (note 4 ,5) - 9.1 12 nc gate-source charge qgs - 1.2 - gate-drain("miller") charge qgd - 4.5 - source-drain ratings and characteristics(ta=25 ) characteristics symbol test condition min type max unit continuous drain reverse current i dr - - - 1.3 a pulse drain reverse current i drp - - - 5.0 a forward voltage(diode) v dsf i dr = 1.3 a,v gs =0v - - 1.4 v reverse recovery time trr i dr = 1.3 a,v gs =0v , di dr / dt =100 a / s - 163 - ns reverse recovery charge qrr - 0.85 - c note 1.repeativity rating :pulse width limited by junction temperature 2.l= 92m h i as = 1.3 a,v dd = 50 v, r g =0 ? ,starting t j =25 3.i sd 1.3 a,di/dt 200 a/us,v dd < bv dss ,starting t j =25 4.pulse test:pulse width 300us,duty cycle 2% 5. essentially independent of operating temperature. this transistor is an electrostatic sensitive device please handle with caution www.datasheet.co.kr datasheet pdf - http://www..net/
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wfu wfu wfu wfu 1 1 1 1 n60 n60 n60 n60 3 / 7 fig.1 on-state cha ra cteristics fig.2 transfer current characteristics fig.3 on resistance variation vs drain current fig.4 body diode forward voltage variation with source current and temperature fig.5 on-resistance variation vs junction temperature fig.6 gate charge characteristics www.datasheet.co.kr datasheet pdf - http://www..net/
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wfu wfu wfu wfu 1 1 1 1 n60 n60 n60 n60 4 / 7 fig.7 maximum safe operation area fig.9 transient thermal response curve fig.8 maximum drain current vs case temperature www.datasheet.co.kr datasheet pdf - http://www..net/
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wfu wfu wfu wfu 1 1 1 1 n60 n60 n60 n60 5 / 7 fig.10 gate test circuit & waveform fig.11 r esistive switching test circuit & waveform fig.12 uncamped inductive switching test circuit & waveform www.datasheet.co.kr datasheet pdf - http://www..net/
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wfu wfu wfu wfu 1 1 1 1 n60 n60 n60 n60 6 / 7 fig.13 peak diode recovery dv/dt test circuit & waveform www.datasheet.co.kr datasheet pdf - http://www..net/
steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance wfu wfu wfu wfu 1 1 1 1 n60 n60 n60 n60 7 / 7 to251 to251 to251 to251 package package package package dimension dimension dimension dimension unit:mm www.datasheet.co.kr datasheet pdf - http://www..net/
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